MODERN SILICON CARBIDE POWER DEVICES

Silicon Carbide power devices are being increasingly adopted for many applications such as electric vehicles and charging stations. There is a large demand for a resource to learn and understand the basic physics of operation of these devices to create engineers with in depth knowledge about them.

This unique compendium provides a comprehensive design guide for Silicon Carbide power devices. It systematically describes the device structures and analytical models for computing their characteristics. The device structures included are the Schottky diode, JBS rectifier, power MOSFET, JBSFET, IGBT and BiDFET. Unique structures that address achieving excellent voltage blocking and on-resistance are emphasized.

This useful textbook and reference innovations for achieving superior high frequency operation and highlights manufacturing technology for the devices. The book will benefit professionals, academics, researchers and graduate students in the fields of electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.

Contents:

• Dedication
• About the Author
• Preface
• Introduction
• Material Properties and Processing
• Breakdown Voltage
• Ideal Specific On-Resistance
• Schottky Rectifiers
• Shielded Schottky Rectifiers
• P-i-N Rectifiers
• MPS Rectifiers
• Junction Field Effect Transistors
• The Baliga-Pair (Cascode) Configuration
• Planar-Gate Power MOSFETs
• Trench-Gate Power MOSFETs
• Power JBSFETs
• Super-Junction MOSFETs
• Short Circuit Capability and BaSIC Topology
• Bi-Directional Switch
• Insulated Gate Bipolar Transistors
• SiC Power Device Manufacturing
• Synopsis
• Homework Problems
• Index

Readership: Researchers, professionals, academics, advanced undergraduate and graduate students in electrical & electronic engineering, circuits and systems, semiconductors and energy studies.